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101.
According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.  相似文献   
102.
The effect of Re addition on the microstructure and hardening behaviour of the dual two-phase Ni3Al (L12) and Ni3V (D022) intermetallic alloy was investigated by scanning electron microscopy, transmission electron microscopy and Vickers hardness test. The two-phase eutectoid microstructure accompanying the Re-rich precipitates were observed in the channel region of the alloys in which Re substituted for Ni but not in those in which Re substituted for Al and V. The concomitant addition of Nb (or Ta) with Re more stabilized the two-phase eutectoid microstructure and consequently more induced the fine precipitates in the channel region. The annealing at temperatures below the eutectoid temperature was necessary to induce the fine precipitates in the channel region and thereby result in the precipitation hardening. The fine precipitation in the channel region and related hardening was attributed to the alloying feature so that Re is soluble in the A1 (fcc) phase at high temperatures and becomes less soluble in the two intermetallic phases decomposed from the A1 phase at low temperatures.  相似文献   
103.
This paper is dedicated to studying the following Schrödinger–Poisson system Δ u + V ( x ) u K ( x ) ϕ | u | 3 u = a ( x ) f ( u ) , x 3 , Δ ϕ = K ( x ) | u | 5 , x 3 . Under some different assumptions on functions V(x), K(x), a(x) and f(u), by using the variational approach, we establish the existence of positive ground state solutions.  相似文献   
104.
Hybrid nanoparticles (HNPs) with zinc oxide and polymethyl metha acrylate (inorganic/ polymer) were synthesized through the exploitation of ultrasound approach. The synthesized HNPs were further characterized employing transmission electron microscopy and x-ray diffraction. ZnO-PMMA based HNPs exhibit excellent protection properties to mild steel from corrosion when gets exposed to acidic condition. Electrochemical impendence spectroscopy (EIS) analysis was accomplished to evaluate the corrosion inhibition performance of MS panel coated with 2 wt% or 4 wt% of HNPs and its comparison with bare panel and that of loaded with only standard epoxy coating., Tafel plot and Nyquist plot analysis depicted that the corrosion current density (Icorr) decreases from 16.7 A/m2 for bare material to 0.103 A/m2 for 4% coating of HNPs. Applied potential (Ecorr) values shifted from negative to positive side. These results were further supported by qualitative analysis. The images taken over a period of time indicated the increase in lifetime of MS panel from 2 to 3 days for bare panel to 10 days for HNPs coated panel, showing that ZnO-PMMA HNPs have potential application in metal protection from corrosion by forming a passive layer.  相似文献   
105.
刘静松 《化学教育》2020,41(9):12-16
分析学生对二氧化碳的3个典型学科认知障碍,以“二氧化碳的捕捉”为情境,通过“尝试捕捉二氧化碳”“谁在捕捉二氧化碳”“捕捉背后的原理”等3个主要环节,实现对学科认知障碍的突破,展示了一种新的中考复习教学思路。  相似文献   
106.
107.
基于深度学习的方法,在HL-2A装置上开发出了一套边缘局域模(ELM)实时识别算法。算法使用5200次放电数据(约24.19万数据切片)进行学习,得到一个深度为22层的卷积神经网络。为衡量算法的识别能力,识别了HL-2A装置自2009年实现稳定ELMy H模放电以来所有历史数据(约26000次放电数据),共识别出1665次H模放电,其中误识别35次,误报率为2.10%。在实际的1634次H模放电中,漏识别4次,漏识别率为0.24%。该误报率和漏报率可以满足ELM实时识别的精度要求。识别算法在实时控制环境下,对单个时间点的平均计算时间为0.46ms,可以满足实时控制的计算速度要求。  相似文献   
108.
Naphthalimide‐phthalimide derivatives (NDPDs) have been synthesized and combined with an iodonium salt, N‐vinylcarbazole, amine or 2,4,6‐tris(trichloromethyl)‐1,3,5‐triazine to produce reactive species (i.e., radicals and cations). These generated reactive species are capable of initiating the cationic polymerization of epoxides and/or the radical polymerization of acrylates upon exposure to very soft polychromatic visible lights or blue lights. Compared with the well‐known camphorquinone based systems used as references, the novel NDPD based combinations employed here demonstrate clearly higher efficiencies for the cationic polymerization of epoxides under air as well as the radical polymerization of acrylates. Remarkably, one of the NDPDs (i.e., NDPD2) based systems is characterized by an outstanding reactivity. The structure/reactivity/efficiency relationships of the investigated NDPDs were studied by fluorescence, cyclic voltammetry, laser flash photolysis, electron spin resonance spin trapping, and steady state photolysis techniques. The key parameters for their reactivity are provided. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015 , 53, 665–674  相似文献   
109.
Four kinds of red phosphorescent organic light-emitting devices were fabricated and compared to investigate the effect of interfacial layers for hole transport and electron injection. 1 nm-thick LiF in the device A and C and 1 nm-thick Cs2CO3 in the device B and D were deposited as an electron injection layer between the anode and the electron transport layer, and 5 nm-thick layer of dipyrazion[2,3-f:2′,2′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile[HATCN] was inserted as a hole transport interfacial layer between the hole injection layer and the hole transport layer only in the device C and D. Under a luminance of 1000 cd/m2, the power efficiencies were 7.6 lm/W and 8.5 lm/W in the device A and B, and 8.6 lm/W and 13.4 lm/W in the device C and D. The quantum efficiency of the device D was 15.8% under 1000 cd/m2 which was somewhat lower than those of the device A and C, but a little higher than that of the device B. The luminance of the device D was much higher than those of the other devices at a given votage. The luminance of the device D at 7 V was 23,710 cd/m2, which was 13.0, 3.4, and 4.0 times higher than those of the device A, B, and C at the same voltage, respectively.  相似文献   
110.
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